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Department Of Electrical Engineering Iwaki Meisei University | 論文
- Annealing and Hydrogenation Behaviors of Electron-Beam Induced Defects in n-type Si
- Pressure Dependence of Resistivity in p-Type Germanium
- Comment on "Second-Order Piezoresistance Coefficients of n-Type Silicon"
- Third-Order Piezoresistance Coefficients in p-Type Si
- Piezoresistance Effects Associated with Hydrostatic Pressure in p-Type Ge
- Fourth-Order Piezoresistance Coefficients in Cubic Semiconductors
- Role of the Valence Band Density of States in the Piezoresistance of p-Type Semiconductors Si and Ge
- Numerical Study of the Piezoresistance Effect in p-Type Si