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Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te | 論文
- An Area-Efficient and Fully Synthesizable Bluetooth Baseband Module for Wireless Communication(Integrated Electronics)
- An Analog Equalizer for Fast and Remote Data Communication through Twisted Copper Pair
- An Analog/Digital Mixed-Mode Audio Power Amplifier with Novel Ripple Feedback Filter(Communication Devices/Circuits)
- In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
- A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
- Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
- Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- 河道形状の変化に及ぼす河川合流に関する実験的研究
- Single Crystal Growth and Characterizations of A_3BC_3D_2O_-Type Compounds for Piezoelectric Applications
- Fabrication and Characterization of a Quantum Dot Flash Memory
- Fabrication and Characterization of a Quantum Dot Flash Memory
- Fabrication and Characterization of a Quantum Dot Flash Memory
- An Adaptive Channel Access Control Method for CDMA/PRMA(Special Issue on Multiple Access and Signal Transmission Techniques for Future Mobile Communications)
- A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Extremely Transparent and Conductive ZnO:Al Thin Films Prepared by Photo-Assisted Metalorganic Chemical Vapor Deposition (photo-MOCVD) Using AlCl_3(6H_2O) as New Doping Material
- Study on Gate Around Transistor (GAT) Layout for Radiation Hardness(Session9A: Silicon Devices IV)
- Study on Gate Around Transistor (GAT) Layout for Radiation Hardness(Session9A: Silicon Devices IV)
- A Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Method (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))