スポンサーリンク
Department Of Electrical Engineering And Computer Science Kaist | 論文
- 1/f Noise Characteristics of Hydrogenated Long-Wavelength Infrared HgCdTe Photodiode
- Memory Operation of InAs Quantum Dot Field Effect Transistor
- Quantum Well Infrared Photodetector with pHEMT structure
- Lateral Silicon Field-Emission Devices using EIectron Beam Lithography
- Silicon Nano-Crystal Memory with Tunneling Nitride
- 40nm Electron Beam Patterning by Optimization of Digitizing Method and Post Exposure Bake and its Application to Silicon Nano-Fabrication
- 40nm Electron Beam Patterning by Optimization of Digitizing Method and Post Exposure Bake and its Application to Silicon Nano-Fabrication
- 40nm Electron Beam Patterning by Optimization of Digitizing Method and Post Exposure Bake and its Application to Silicon Nano-Fabrication
- Reduced Dark Current Characteristics of a Norman-Incident In_Ga_As/GaAs QWIP Employing a p-i-n-i-p Camel Diode Structure
- Gate-Induced Drain Leakage Currents in Metal Oxide Semiconductor Field Effect Transistors with High-κ Dielectric
- Piggyback Packetization of Duplicate Packets for Packet-Loss Resilient Video Transmission(Mobile Multimedia Communications)
- Poly(3, 4-Ethylenedioxythiophene) : Poly(Styrenesulfonate) (PEDOT : PSS) Films for the Microbolometer Applications
- A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate)(PEDOT: PSS) Films for the Microbolometer Applications(Session5B: Emerging Devices III)
- A Study on Poly (3,4-ethylenedioxythiophene): Poly (styrene sulfonate) (PEDOT:PSS) Films for the Microbolometer Applications(Session5B: Emerging Devices III)
- Retention characteristics of nano scale ferroelectric VDF/TrFE copolymer film (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Retention characteristics of nano scale ferroelectric VDF/TrFE copolymer film (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer
- Low power pixel-level ADC for a micro-bolometer(Session9A: Silicon Devices IV)
- Low power pixel-level ADC for a micro-bolometer(Session9A: Silicon Devices IV)
- A New CMOS Passive Mixer with High Linearity