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Department Of Electrical Engineering Aichi Institute Of Technology Toyota | 論文
- Step-Covertage Characteristics of Silicon-Dioxide Films Formed by a New Low-Temperature Chemical-Vapor-Deposition Method
- Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films
- Low-Temperature CVD of SiO_2 by Alkoxy-Silane-Iso-Cyanate
- Hydrogen-Radical Annealing of Chemical Vapor-Deposited Amorphous Silicon Films
- Spectroscopical Measurements of Ablation Plasma Generated by Excimer Laser from Functionally Graded Materials
- Effect of Oxygen Deficiency on T_c of Oxide Superconductor La_Ba_Cu_3O_y : Electrical Properties of Condensed Matter
- Identification of the Superconducting Phase in the Nd-Ce-Sr-Cu-O System : Electrical Properties of Condensed Matter
- On the 110 K Superconductor in the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
- Identification of the Superconducting Phase in the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
- Copper phthalocyanine thin-film transistor with a polycarbonate gate dielectric layer (第47回真空に関する連合講演会プロシーディングス--2006年11月7日〜9日,大阪)
- Orientation of Metalphthalocyanine Molecule Deposited on Polycarbonate Thin Film
- Chemical Vapor Deposition Based Preparation on Porous Silica Films
- Hetero Atomic-Layer Epitaxy of Ge on Si(100)
- A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant
- Chemical-Vapor Deposition of OH-free and Low-k Organic-Silica Films
- Formation of an Atomically Abrupt Si/Ge Hetero-Interface
- Formation of Atomically Abrupt Si/Ge Hetero-Interface
- A Proposed Atomic-Layer-Deposition of Germanium on Si Surface
- A Proposed Atomic-Layer-Deposition of Germanium on Si(100)
- Orientation and Electrical Conduction of Poly(3-hexylethiophene) Thin Film Prepared by Using a Different Solution-process Method