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Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology | 論文
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Advantage of Strained Quantum Wire Lasers
- High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
- Humidity Sensor Using Surface Acoustic Wave Delay Line with Hygroscopic Dielectric Film
- Measurement of Humidity Using Surface Acoustic Wave Device
- Liquid Sensor Using Two-Port Surface Acoustic Wave Resonator : Ultrasonic Measurement
- Electronic Linear Acoustic Beam Scanning Using an Interdigital Transducer : Acoustical Measurements and Instrumentation
- Precise Measurement of Surface Acoustic Wave Velocity Using a Swept Frequency IDT-NDE System : SAW and Communication Devices
- Measurement of Elastic Anisotropy of Solid Using an Interdigital Transducer for Underwater Ultrasonic Wave Excitation : Acoustic Measurements
- Underwater Ultrasonic Wave Transducer Using Interdigital Electrodes : Non-Destructive Testing
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching