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Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology | 論文
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Possible Errors due to Deviation from the Cosine Response in the Reference Cell Calibration under Global Irradiance
- Selective Adsorption of an Antibody onto a Plasma-Polymerized Film for Protein Patterning
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories
- Leakage Mechanism of Local Junctions Forming Main or Tail Mode of DRAM Retention Characteristics
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- Japanese Indoor Calibration Method for the Reference Solar Cell and Comparison with the Outdoor Calibration
- Self-Assembled Lipopolymers with Physisorbed Amphiphilic GC Materials for QCM Odor Sensors
- Study of PEG Tether Length of Pegylated-Lipid Sensing Films in QCM Odor Sensors
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- Calibration of Pyranometers for the Photovoltaic Device Field
- Frequency-Translated Holography for the Observation of Surface Acoustic Waves
- Development of Photochemical Analysis System for F_2-Excimer Laser Lithography Processes
- Surface Acoustic Wave Liquid Sensors Based on One-Port Resonator