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Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology | 論文
- Early Stage of Pulsed High Current Discharge with Copper Power
- EFFICIENT ENERGY DELIVERING IN POWDER PLASMAS
- Discharge evolution in a pulsed metal powder plasma creation
- Effects of Polarization Reversal and Surface Conditions on the Ferroelectric Electron Emission
- AVDO_2 and EEG as Indicators for Treatment of Post-traumatic Brain Swelling : Experimental Study
- B-1-57 Design of Sequentially Rotated Circularly Polarized 2x2 Patch Antenna Arrays for Monopulse Operation
- Low-Temperature Thermal-Oxidation of Silicon
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Epitaxial Growth of Ge Layers on Si Substrates by Vacuum Evaporation
- Pattern Analysis of a GPS Microstrip Antenna on a Rectangular Ground Plane by Using Modified Edge Representation
- Equivalent Edge Currents for Modified Edge Representation of Flat Plates: Fringe Wave Components
- Synthesis of thermoresponsive polysilsesquioxane with methoxyethylamide group and crown ether
- A New Amphiphilic and Thermoresponsive Polysilsesquioxane Having Alkoxyethylamide Group
- High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces
- High-Efficiency Delta-Doped Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition
- Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
- Diffusion Constants of Si Adsorbates on a Si(001) Surface
- Observation of Si(001) Surface Domains in Absorption Current Images of an Electron Microscope
- Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope