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Department Of Electrical And Electronic Engineering The University Of Tokushinna | 論文
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
- Effect of Impeller Blade Angle on Power Consumption and Flow Pattern in Horizontal Stirred Vessel
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_