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Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers | 論文
- The 1/ f Noise MOS Transistors
- Modulation of the Optical Guided Wave by UV Light Excitation
- Effect of Heat Treatment on the Interface Characteristics in Reactively Sputtered Al_2O_3-Si Structures
- Effect of Radiation in Reactively Sputtered Al_2O_3-Si Structures
- Al_2O_3-Silicon MOS Field Effect Transistors
- Solid-Solid Diffusion of Boron in Silicon Using Reactive Sputtering
- Reaction Temperature of HgS
- Dielectric Constant of α-HgS in Microwave Region
- The Effects of Traps in the Semiconductor on the Characteristics of MOS Transistors
- Characteristics of Silicon Silicon-Dioxide Structures Formed by DC Reactive Sputtering
- Interface Properties of Al_2O_3-Ge Structure and Characteristicsof Al_2O_3-Ge MOS Transistors
- Effects of Interface States on the Characteristics of MOS Transistors
- Interface Characteristics of the Reactively Sputtered Al_2O_3-Si Structure