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Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University | 論文
- Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
- Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
- Continuous production of carbon nanostructures using plasma jet
- Diagnosis of Asymmetric Thermal Plasma Jet Using Computer Tomography Technique
- Characterization of Ferroelectric Property of C-Axis- and Non-C-Axis-Oriented Epitaxially Grown Bi_2VO_ Thin Films : Electrical Properties of Condonsed Matter
- Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
- Optical Properties of ZnCdS:I Orange and ZnSTe:I White Thin Film Phosphor for High Ra White LED
- Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
- Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
- Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
- Electrical Responses of Ln-Ba-Cu-O (Ln=Eu, Y), Ba-K-Bi-O and Ba-Pb-Bi-O Superconducting Thin Films to Pulsed Infrared Radiation
- Changes of Superconductivity and Crystal Structure on Ba_2YCu_3O_ Thin Film by 2.5 MeV Ni^ Ion Irradiation
- Coexistence of Bolometric and Nonbolometric Optical Responses in High-T_c LnBa_2Cu_3O_y(Ln=Y, Eu) Thin Films