スポンサーリンク
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University | 論文
- Expression of Bone Morphogenetic Protein Messenger RNA in Dental Extraction Wounds in Mice
- The Combined Effects of Hand-Arm Vibration and Noise on Autonomic Nervous Function of Drill Users in Gold Mine
- Optical Studies of Self-Trapped Excitons in CsCl and CsBr
- Orientation of the Optical Dipole Moments of the Lowest-to-Higher-States Transitions of Self-Trapped Excitons in Alkali Chlorides
- Photo-Induced Dimer-Diradical Formation in Diacetylene Crystals at Low Temperatures
- Thermoluminescence and Reactions of Freed Interstitial and Trapped-Hole Centers in KBr Crystals below Room Temperature
- Excitation-Induced Atomic Motion of Self-Trapped Excitons in RbCl: Reorientation and Defect Formation
- De-Excitation Pathways of Highly-Excited Self-Trapped Exciton and Electron Plus Self-Trapped Hole
- Restoration of Fluorescence from the Lowest Singlet State in the Self-Trapped Exciton by Perturbation with Monovalent Cation Impurities in Alkali Halides
- Beam-divergence deconvolution for diffractive imaging
- Effect of Ion-Irradiation on Silieide Formation in Metal-Silicon System with Interfacial Silicon Dioxide Layer
- Electronic Structure and Transport Properties of Pseudogap System Fe_2VAI
- Enhancement of Emission of Si Atoms from Si(100) Surface by Low-Rate Br Exposure : A New Model of Dry Etching Based on Defect-Adsorbate Interaction
- Laser-Induced Electronic Emissions of Si Atoms from Si(100) Surfaces
- Solid-State Amorphization in Palladium/Titanium Multilayer Films during Sputter Deposition and Postdeposition Annealing
- Metallic Alloy Coatings Using Coaxial Vacuum Arc Deposition
- Frenkel Defect Formation and Intersystem Crossing at Highly-Excited States of the Triplet Self-Trapped Exciton in NaCl
- Bias Voltage Dependence of Tunnel Magnetoresistance Effect in Spin-Valve Type MnIr/NiFe/Co_Fe_/SrTiO_3/La_Sr_MnO_3 Tunnel Junctions
- Magnetoresistance Effect in Layered-Perovskite La_Ca_Mn_2O_7 Thin Films
- Calculation of Bond Lengths in Si_Ge_x Alloys Based on the Valence-Force-Field Model