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DRAM PM Center, Samsung Electronics Co. | 論文
- URCAT (U-shaped-Recess-Channel-Array Transistor) Technology for 60nm DRAM and beyond
- Cost-Effective and Highly Reliable 6F2 Multi-Gigabit DRAM in 60nm Technology Node for Low Power and High Performance Applications
- A Novel Cell Structure with Bit Line Cap Spacer (BCS) and Top Enlarged Storage Node Contact (TESC) for 90nm DRAM Technology and Beyond
- Robust TiN/AHO/HSG-Cylinder Capacitor for High Density DRAMs
- Improvement of Bit-Line Contact Resistance for Memory Devices with Silicide Gate