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Communications Research Laboratory Ministry Of Posts And Telecommunications | 論文
- 符号化音声の品質評価尺度としての主観SN比 : 日英語間比較
- Analysis of the Decaprenyl Diphosphate Synthase (dps) Gene in Fission Yeast Suggests a Role of Ubiquinone as an Antioxidant^1
- Cloning and Functional Expression of a Novel Geranylgeranyl Pyrophosphate Synthase Gene from Arabidopsis thaliana in Escherichia coli
- Production of Ubiquinone in Escherichia coli by Expression of Various Genes Responsible for Ubiquinone Biosynthesis
- WIRELESS COMMUNICATION SYSTEMS USING STRATOSPHERIC PLATFORMS
- MULTIBEAM ANTENNAS IN THE MILLIMETER-WAVE BAND ON BOARD THE TEST FLIGHT MODEL OF STRATOSPHERIC PLATFORM
- Calibration of a DBF Receiving Array Antenna by Using a Reference Sequence for Systems in Power-Limited Channels
- Evaluation of vector Winds Observed by NSCAT in the Seas around Japan
- Interference of Sea Surface Echo and Rain Echo Observed by a Real Aperture Airborne Imaging Radar (Special Issue on Weather Radar Technology)
- Construction and Utilization Experiment of Multimedia Education System Using Satellite ETS-V and Internet (Special Issue on Educational System using Multimedia and Communication Technology)
- An 18 GHz-Band MMIC Diode Linearizer Using a Parallel Capacitor with a Bias Feed Resistance(Special Issue on Microwave and Millimeter Wave Technology)
- APD MEASUREMENT OF AUTOMOTIVE NOISE AT 1.8 GHz TO ESTIMATE INTERFERENCE IN DIGITAL COMMUNICATION SYSTEMS
- A Proposal on Satellite Hitchhiker Payload for Pan-Pacific Information Network (Special Issue on Satellite Communications Networking and Applications)
- Design Theory of Ultra-Short Pulse Generation from Actively Mode-Locked Fiber Lasers
- The 1.5 GHz Electromagnetic Near-field Used for Cellular Phones Does Not Promote Rat Liver Carcinogenesis in a Medium-term Liver Bioassay
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors