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College of General Education Tohoku University | 論文
- Preparation of PbTiO_3 Thin Films Using a Coating Photolysis Process with ArF Excimer Laser
- Direct Conversion of Metal Acetylacetonates and Metal Organic Acid Salts into Metal Oxides Thin Films Using Coating Photolysis Process with An ArF Excimer Laser
- Direct Conversion of Titanium Alkoxide into Crystallized TiO_2 (rutile) Using Coating Photolysis Process with ArF Excimer Laser
- Reflection and Photoemission Studies of Neutron-Irradiated Graphite
- Optical Gain and Optical Internal Loss of GaN-Based Laser Diodes Measured by Variable Stripe Length Method with Laser Processing : Optics and Quantum Electronics
- Effect of Intentionally Formed 'V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
- GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Characterization of a Non-Superconducting Cuprate, Bi_2Sr_2YCu_2O_ : Electrical Properties of Condensed Matter
- Effects of Cation Substitution on the Structural and Superconducting Properties of YBa_2Cu_3O_7 : I. Oxides
- Crystal Structure and Superconductivity Controlled by Cation Substitution and Oxygen Annealing in Y_Ca_xBa_2Cu_3O_y and YBa_La_xCu_3O_y : Electrical Properties of Condensed Matter
- A Local-Density Band Theory for the Fermi Surface of the Heavy-Electron Compound CeRu_2Si_2
- Neutron-Irradiation Effects on the Magnetic-Field-Induced Electronic Phase Transitions in Graphite
- Crystal Structures of the TiO_2 Films on the Quartz Substrate and the Powder formed in the Gaseous Phase by ArF Laser Photolysis of Ti(O-i-C_3H_7)_4
- Mossbauer Study of Corrosion Products on Iron Film by Detecting Internal Conversion Electrons
- Spatially Selective Formation of Microcrystalline Germanium by Laser-Induced Pyrolysis of Organogermanium Nanocluster Film
- Nanocrystalline Silicon Flim Prepared by Laser Annealing of Organosilicon Nanocluster : Semiconductors
- Electrical Properties of tert-Butyl-Substituted Germanium Cluster
- Effect of Hydrogen Plasma Treatment on Formation of Amorphous Silicon Film Using Organosoluble Silicon Cluster as a Precursor