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Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST) | 論文
- Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
- Ballistic Spin Transport in Four-Terminal NiFe/In_Ga_As Structure : Semiconductors
- Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
- Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
- Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
- Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET
- High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices