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Canon Inc. Tokyo Jpn | 論文
- Synthesis of BaTiO_3 Thin Films Substituted with Hafnium and Zirconium by a Laser Ablation Method Using the Fourth-harmonic Wave of a YAG Laser
- Optical Properties of Ba_2NaNb_5O_ Film Fabricated by RF Magnetron Sputtering Method
- Dimensional Crossover Effect of Pinning in YBa_2Cu_3O_7 Films
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer
- High-Speed GaInAs PIN Photodiodes with Low Series Resistance
- Effects of Phosphorus Pressure on Low-Energy Emission Bands in Zn-Diffused InP
- Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer
- Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE
- GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique
- Zn Diffusion into InP Using Dimethylzinc as a Zn Source
- Current-Voltage Characteristics and Conductivity of Metal-Insulator-Metal(Ti/TaO_x/Ta) Type Thin-Film Diode
- Current-Voltage Characteristics of Thin-Film Diode Elements and Application of Poole-Frenkel Equation
- Influence of Current-Voltage Characteristics on Image-Sticking of Thin-Film-Diode Liquid-Crystal Displays
- Characteristics of a New High-Sensitivity X-Ray Imaging Tube for Video Topography
- Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor
- Preparation of Tetragonal Perovskite Single Phase PbTiO_3 Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introdueing Pb and Ti Precursors
- Two-inch-Diameter Magneto-optical Disk System with 3 GB Capacity and 24 Mbps Data Transfer Rate Using a Red Laser (Invited Paper)
- Influence of Ce Content on Crystal and Electrical Properties of Ce_xZr_0_2 Thin Films on Si(100) Substrates
- Preparation of SrBi_2Ta_2O_9 Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi_2Ta_2O_9/CeO_2/Si(100) Structures