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Canon Inc. Tokyo Jpn | 論文
- Initial Stage and Growth Process of Ceria, Yttria-Stabilized-Zirconia and Ceria-Zirconia Mixture Thin Films on Si(100) Surfaces
- Effect of Reducing Process Temperature for Preparing SrBi_2Ta_20_9 in a Metal/Ferroelectric/ Semiconductor Structure
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi_2Ta_2O_9 as the Ferroelectric Material
- Crystal and Electrical Characterizations of Epitaxial Ce_XZr_O_2 Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor
- Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with CeO_2 Buffer Layer
- Preparation of Perovskite Oriented PbZr_xTi_O_3 Films with Suppressed Vapor Phase Reactions by a Digital Chemical Vapor Deposition Method
- Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO_2 Buffer Layer ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy
- Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350℃ by Conventional Molecular Beam Epitaxy
- Fabrication of sub-100 nm Patterns using Near-field Mask Lithography with Ultra-thin Resist Process
- Molecular design of o-nitrobenzyl phenol ether for photo-deprotection resist; challenge to half-pitch 22nm using near-field lithography