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Atr Optical And Radio Communications Research Laboratories | 論文
- Radiative Relaxation of Vibration of the Nitric Oxide Molecule in Its Electronic Ground State (X^2II)
- Beam Forming Characteristics of a Waveguide-Type Optical Phased Array Antenna
- A Note on the Band-Folding Effects in the (GaAs)_n/(AIAs)_1, (GaAs)_1/(AIA_s)_n(n=1〜10) Superlattices
- A Note on the Electronic Band Structures of (111) Superlattices of III-V Semiconductor Compounds : Electrical Properties of Condensed Matter
- Intersubband Absorption in In_Ga_As/Al_Ga_As Multiple Quantum Wells
- CS-4-4 シロール誘導体のイオン化ポテンシャル低減と波長選択型有機光電変換素子への応用(CS-4.有機半導体の物性とデバイス応用および今後の展開,シンポジウムセッション)
- C-13-7 静電塗布法を利用した高効率な有機薄膜太陽電池(C-13.有機エレクトロニクス,一般セッション)
- Simplified Analysis of Coplanar Waveguide for LiNbO_3 Optical Modulator by Variational Method (Special Issue on Optical/Microwave Interaction Devices, Circuits and Systems)
- Analysis of Cycle Slip in Clock Recovery on Frequency-Selective Nakagami-Rice Fading Channels Based on the Equivalent Transmission-Path Model
- 21pGM-5 弱く結合した1次元磁性体Cu(diazine)X_2, (X=Cl,Br)の磁性(21pGM 量子スピン・フラストレーション系,領域3(磁性,磁気共鳴))
- Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells
- 新たな分科会とは?(95周年記念号:明るい未来を目指して)
- On the Kernel MUSIC Algorithm with a Non-Redundant Spatial Smoothing Technique (Special Section on Digital Signal Processing)
- A Novel Spatial Smoothing Technique for the MUSIC Algorithm
- Proposal of the Fast Kernel MUSIC Algorithm (Special Section on Digital Signal Processing)
- Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
- Carrier Transport Affected by Γ-X Resonance in GaAs/AlAs Type-I Short-period Superlattices
- Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
- Lateral Tunneling Devices on GaAs (111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant
- Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth