Carrier Transport Affected by Γ-X Resonance in GaAs/AlAs Type-I Short-period Superlattices
スポンサーリンク
概要
著者
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HOSODA M.
ATR Optical and Radio Communications Research Laboratories
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TOMINAGA K.
ATR Optical and Radio Communications Research Laboratories
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OHTANI N.
ATR Optical and Radio Communications Research Laboratories
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MIMURA H.
ATR Optical and Radio Communications Research Laboratories
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WATANABE T.
ATR Optical and Radio Communications Research Laboratories
関連論文
- Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells
- Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
- Carrier Transport Affected by Γ-X Resonance in GaAs/AlAs Type-I Short-period Superlattices
- Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices