Intersubband Absorption in In_<0.15>Ga_<0.85>As/Al_<0.35>Ga_<0.65>As Multiple Quantum Wells

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概要

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• Intersubband absorptions within pseudomorphic quantum wells of the conduction band in In_<0.15>Ga_<0.85>As/Al_<0.35>Ga_<0.65>As multiple layers have been studied with various well widths and doping concentrations. The band-offset ratio of the conduction band is estimated to be from 55% to 70% by the calculation of intersubband absorption energies, taking into account the strain effects, the doping effects, and the nonparabolic nature of the energy band.

• 社団法人応用物理学会の論文
• 1990-04-20

著者

• KATAHAMA Hisashi

  ATR Optical and Radio Communications Research Laboratories

• SHAKUDA Yukio

  ATR Optical and Radio Communications Research Laboratories

関連論文

• Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates
• Intersubband Absorption in In_Ga_As/Al_Ga_As Multiple Quantum Wells
• Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth

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