Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates

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概要

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• The molecular beam epitaxial growth of Si-doped GaAs on slightly (1-5°) misoriented (111)A substrates was examined. Occupation sites of Si were greatly affected by the tilted angle, the flux ratio and the substrate temperature. In the growth on an exactly (111)A-oriented substrate at low flux ratio, substantially all Si atoms acted as acceptors. With increase of the tilted angle and / or the flux ratio and with decrease of the substrate temperature, the number of donor site Si atoms increased. A doping mechanism including preferential decomposition of As_4 molecules at the steps was proposed.

• 社団法人応用物理学会の論文
• 1990-08-20

著者

• FUJIMOTO Isao

  Science and Technical Research Laboratories of NHK

• Seto Hiroyuki

  Atr Optical And Radio Communications Research Laboratories

• Nishine Shiro

  Atr Optical And Radio Communications Research Laboratories

• OKANO Yoshimichi

  ATR Optical and Radio Communications Research Laboratories

• SHIGETA Mitsuhiro

  ATR Optical and Radio Communications Research Laboratories

• KATAHAMA Hisashi

  ATR Optical and Radio Communications Research Laboratories

関連論文

• Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
• Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates
• Intersubband Absorption in In_Ga_As/Al_Ga_As Multiple Quantum Wells
• Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth
• Photoluminescence from Highly Be-Doped AlGaAs Grown by MBE

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