A Note on the Electronic Band Structures of (111) Superlattices of III-V Semiconductor Compounds : Electrical Properties of Condensed Matter

スポンサーリンク

概要

• 論文の詳細を見る

• The electronic band structures of (111) superlattices of III-V semiconductors are considered. In the (III_A-V_A)_m/(III_B-V_B)_n type of superlattices, the space groups are C^1_<3v> for m+n=3l and C^5_<3v> for m+n≠3l, where m, n and l are integers. The Bravais lattice of the former is hexagonal and that of the latter is rhombohedral. Band folding occurs along the (111) direction of the original f.c.c. Brillouin zone of zincblend structure. With the inclusion of spin orbit interaction, the top of the valence band, which is sixfold degenerate in bulk form, splits into three levels, each of which is twofold degenerate. None of the levels is an eigenstate of the total angular momentum. As a numerical example, the band structure of (111) superlattice, (GaAs)_1/(AlAs)_1 is calculated by means of an improved tight binding method both with and without the inclusion of spin orbit interaction.

• 社団法人応用物理学会の論文
• 1988-10-20

著者

• Nara Shigetoshi

  Atr Optical And Radio Communications Research Laboratories

関連論文

• A Note on the Band-Folding Effects in the (GaAs)_n/(AIAs)_1, (GaAs)_1/(AIA_s)_n(n=1〜10) Superlattices
• A Note on the Electronic Band Structures of (111) Superlattices of III-V Semiconductor Compounds : Electrical Properties of Condensed Matter

スポンサーリンク