スポンサーリンク
Aist Tsukuba Jpn | 論文
- Magnetic Field Dependence of Critical Current Density of Polycrystalline Tl-2223 Wire
- Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
- Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
- Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
- Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
- Channeling Radiation from 1 MeV Electrons
- Two electrical conductors beneath Kusatsu-Shirane volcano, Japan, imaged by audiomagnetotellurics, and their implications for the hydrothermal system
- Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)_3 Dissolved with Tetrahydrofuran Solvent : Surfaces, Interfaoes, and Films
- Ion Extraction of Alkali Metal Cations by a Calix[4]arene Bearing Two Ester Groups
- Fractionation of Conjugated Linoleic Acid Isomers by Selective Hydrolosis with Candida rugosa Lipase
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- High Temperature Annealing-Induced Phase Transformation Characteristic of Nitrogen-Rich Hafnium Nitride Films
- Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
- Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
- The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application