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Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea | 論文
- Effect of response time of welding current in invert DC spot system on weldability of aluminum alloy sheet
- Effect of Fullerene Concentration on Flat-Band Voltage Shift of Capacitance–Voltage Curve in Organic Memory Devices Fabricated Using Hybrid Poly(4-vinyl phenol) Active Layer Containing Fullerene
- Efficiency Enhancement and Color Stabilization in Organic Light-Emitting Devices Utilizing a Fullerene–Polymer Composite Layer Acting as a Hole Transport Layer
- Joining of Steel to Aluminum Alloy by AC Pulse MIG Welding
- Electrical Properties and Operating Mechanisms of Nonvolatile Organic Memory Devices Fabricated Utilizing Hybrid Poly(N-vinylcarbazole) and C60 Composites
- Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses
- Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line
- High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain