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Advanced Research Laboratory, Hitachi Ltd. | 論文
- Spin-Polarized Scanning Electron Microscope for Magnetic Domain Observation
- Observation of Magnetic Stripe Domains in Ni-Fe Films Using Spin-Polarized Scanning Electron Microscopy
- X-Ray Photoelectron Spectroscopy of Micrometer-Size Surface Area Using Synchrotron Radiation
- An Inverse Problem for the Rotating Wave Approximation on a Partial $\ast$-Algebra(Analysis of Operators on Gaussian Space and Quantum Probability Theory)
- X-Ray Sensing Pickup Tube
- X-Ray Microprobe with a Pair of Elliptical Mirrors
- Improvement of Spatial Resolution of Monochromatic X-ray CT Using Synchrotron Radiation
- Evaluation of Thin Silicon Dioxide Layers by Beam Assisted Scanning Tunneling Microscope
- Observation of Threefold Symmetry Images due to a Point Defect on a Graphite Surface Using Scanning Tunneling Microscope (STM)
- Direct Observation of Working Vacuum Tunnel Junctions Using a Transmission Electron Microscope
- Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
- Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
- Analysis of the Spin Polarization of Secondary Electrons Emitted from Permalloy Polycrystals
- Narrow Pitch Tracking Using Optical Head for Recording with Atomic Force Microscopy
- Interference Effect of Electron-Capture X-Rays from an ^I-Labeled Protein Monolayer in an Aqueous Solution
- Depth and State Analyses of Deuterium and Helium in D_2-Annealed He^+-Implanted Yttrium Iron Garnet
- Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
- Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field
- GO-STOP Control Using Optical Brain-Computer Interface during Calculation Task
- Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating