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Advanced Materials Laboratories, SONY Corporation | 論文
- 10-W Peak-Power Picosecond Optical Pulse Generation from a Triple Section Blue-Violet Self-Pulsating Laser Diode
- Passive and Hybrid Mode-Locking of an External-Cavity GaInN Laser Diode Incorporating a Strong Saturable Absorber
- Volumetric Optical Recording Using a 400 nm All-Semiconductor Picosecond Laser
- 300W Peak Power Picosecond Optical Pulse Generation by Blue-Violet GaInN Mode-Locked Laser Diode and Semiconductor Optical Amplifier
- High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
- Preparation of monodisperse PNIPAM gel particles in a microfluidic device fabricated by stereolithography
- Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar \{20\bar{2}1\} GaN Substrates
- Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
- High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
- Passively Mode-Locked GaInN Laser Diode Generating 200 fs Optical Pulses
- Effect of Crystal Orientation on Sn Whisker-Free Sn-Ag-Cu Plating