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Advanced Electronic Materials Center, National Institute for Materials Science | 論文
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures : Remarkable Advantages of La_2O_3 over HfO_2
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces
- Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts