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Advanced Device Development Division, NEC Electronics Corporation | 論文
- Time-Dependent Dielectric Breakdown Characterization of 90- and 65-nm-Node Cu/SiOC Interconnects with Via Plugs
- Channel Strain in Advanced CMOSFETs Measured Using Nano-Beam Electron Diffraction
- Two-step Inverse Modeling for Estimation of Channel Impurity Pile-up
- Suppression of Electromigration Early Failure of Cu/Porous Low-$k$ Interconnects Using Dummy Metal
- Electromigration Lifetime Enhancement of CoWP Capped Cu Interconnects by Thermal Treatment
- Overview and Future Challenges eDRAM Technologies
- Time-Dependent Dielectric Breakdown Characterization of 90- and 65-nm-Node Cu/SiOC Interconnects with Via Plugs
- 27pHC-14 Development of hypTPC for H-dibaryon search experiment at J-PARC