Wakejima Akio | Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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- Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japanの論文著者
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan | 論文
- Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer
- Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
- Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition
- Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy
- High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate