Nakamura Shizuo | ULVAC Corporation
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概要
ULVAC Corporation | 論文
- Selectively Doped n-InAlAs/InP Heterostructures Grown by MOCVD
- Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light
- Generation of Extremely High Vacuum with a New Sputter Ion Pump
- Kinetic Behavior of Al Growth on the Si(100) Surface Studied by Scanning Tunneling Microscopy
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors