Gao Jun | Dept. of Electronics and Applied Physics, Tokyo Institute of Technology

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Dept. of Electronics and Applied Physics, Tokyo Institute of Technology | 論文

• Parasitic Effects in Multi-Gate MOSFETs(Integrated Electronics)
• Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
• Investigation of characteristics of pentacene-based MOSFETs structures (シリコン材料・デバイス)
• Work function modulation of PtSi by alloying with Yb
• Contact resistivity reduction for PtSi/Si(100) by dopant segregation process

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