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Dept. of Electronics and Applied Physics, Tokyo Institute of Technology | 論文
- Work function modulation of PtSi by alloying with Yb
- Parasitic Effects in Multi-Gate MOSFETs(Integrated Electronics)
- Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
- Investigation of characteristics of pentacene-based MOSFETs structures (シリコン材料・デバイス)
- Contact resistivity reduction for PtSi/Si(100) by dopant segregation process