Ishida Takeshi | Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

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• Ishida Takeshiの詳細を見る
• 同名の論文著者
• Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japanの論文著者

Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan | 論文

• InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
• Phase Change Nanodroplets and Microbubbles Generated from Them as Sources of Chemically Active Cavitation
• Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors
• Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
• Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates

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