KONISHI Yasuhiro | ULSI Development Center, Mitsubishi Electric Corporation
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概要
ULSI Development Center, Mitsubishi Electric Corporation | 論文
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
- Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
- Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond