Fukumoto Hiroshi | Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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- Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japanの論文著者
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan | 論文
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal--Oxide--Semiconductor Field-Effect Transistor
- Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates