Sekine Katsuyuki | process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
スポンサーリンク
概要
- Sekine Katsuyukiの詳細を見る
- 同名の論文著者
- process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporationの論文著者
process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation | 論文
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique
- Micro-structure Transformation of Silicon : A Newly Developed Transformation Technology for Patternin Silicon Surfaces using the Surface Migration of Silico Atoms by Hydrogen Annealing
- Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
- Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate