KANO Gota | Research Laboratory, Matsushita Electronics Corporation
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概要
Research Laboratory, Matsushita Electronics Corporation | 論文
- A New Heterojunction-Gate GaAs FET : A-4: FIELD EFFECT TRANSISTORS (I)
- Vapor Growth of GaAs_P_x by the Pyrolysis of Ga(CH_3)_3, AsH_3 and PH_3
- Crystal Growth and Orientation of Vacuum Deposited Films of CdTe
- Distribution Coefficinets of Se and Zn in InAs Crystals
- The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO_2-Si