PARK C. | Department of Materials Engineering, School of Engineering, University of Tokyo
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- Department of Materials Engineering, School of Engineering, University of Tokyoの論文著者
Department of Materials Engineering, School of Engineering, University of Tokyo | 論文
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Effect of Partial Pressure of TiCl_4 and NH_3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity
- Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl_4 and NH_3 by Introducing Ar Purge Time
- Threshold Voltage Control in Pentacene TFTs by Perfluoropentacene Stack