HORITA K. | Process Technology Development Div., Renesas Technology Corp.
スポンサーリンク
概要
Process Technology Development Div., Renesas Technology Corp. | 論文
- Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process
- Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
- Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
- Layout Independent Transistor with Stress-controlled and Highly Manufacturable STI Process
- Saturation Phenomenon of Stress Induced Gate Leakage Current