Yang Hyundoek | Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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- Department of Materials Science and Engineering, Gwangju Institute of Science and Technologyの論文著者
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology | 論文
- Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
- Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)
- Electrical Characteristics of TiO_2/ZrSi_xO_y Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications : Semiconductors
- Electrical and Reliability Characteristics of an Ultrathin TaO_xN_y Gate Dielectric Prepared by O_3 Annealing
- Electrical Characteristics of Ozone-Oxidized HfO_2 Gate Dielectrics