Morita Sadayuki | Hitachi VLSI Engineering Corporation

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Hitachi VLSI Engineering Corporation | 論文

• 0.15μm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value (Special Issue on Heterostructure Electron Devices)
• GaAs Radiation Damage Induced by Electron Cyclotron Resonance Plasma Etching with SF_6/CHF_3
• A 12.5-ns 16-Mb CMOS SRAM with Common-Centroid-Geometry-Layout Sense Amplifiers (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
• A Hierarchical Timing Adjuster Featuring Intermittent Measurement for Use in Low-Power DDR SDRAMs
• Sub 1V Swing Internal Bus Architecture for Future Low-Power ULSI's (Special Section on the 1992 VLSI Circuits Symposium)

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