Shigemori Satoshi | Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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- Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japanの論文著者
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan | 論文
- Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface
- Surface Treatment Effect of (NH4)2Sx on $ p$-type GaAs Field Emitter Arrays
- Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
- Nonpolar $(11\bar{2}0)$ p-Type Nitrogen-Doped ZnO by Remote-Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching