OHTA Toshiyuki | ULSI Device Development Laboratories, NEC Corporation
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概要
ULSI Device Development Laboratories, NEC Corporation | 論文
- Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
- Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs (Special Issue on Quarter Micron Si Device and Process Technologies)
- Trends in Capacitor Dielectrics for DRAMs (Special Issue on LSI Memories)
- On the Reaction Scheme for Ti/TiN Chemical Vapor Deposition (CVD) Process Using TiCl_4