Fujiwara Tetsuya | Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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- 同名の論文著者
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.の論文著者
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A. | 論文
- AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
- Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
- Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance