Hayakawa Hajime | Device Development Center, Hitachi Ltd.
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概要
Device Development Center, Hitachi Ltd. | 論文
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- An Effective Defect-Repair Scheme for a High Speed SRAM (Special Issue on LSI Memories)
- Circuit and Functional Design Technologies for 2 Mb VRAM (Special Issue on LSI Memories)
- Low-Temperature Etching for Deep-Submicron Trilayer Resist