Hayakawa Hajime | Device Development Center, Hitachi, Ltd.
スポンサーリンク
概要
Device Development Center, Hitachi, Ltd. | 論文
- Significance of Ultra Clean Technology in the Era of ULSIs (Special Issue on Scientific ULSI Manufacturing Technology)
- Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
- Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Technique to Diagnose Open Defects that Takes Coupling Effects into Consideration(Dependable Computing)
- Noise Reduction Techniques for a 64kb ECL-CMOS SRAM with a 2ns Cycle Time (Special Issue on LSI Memories)