Huang Guo-Wei | National Nano Device Laboratories, Hsinchu 300, Taiwan
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概要
National Nano Device Laboratories, Hsinchu 300, Taiwan | 論文
- Optimization of the Anti-Punch-Through Implant for Electrostatic Discharge Protection Circuit Design
- Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
- Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
- Design and Analysis of On-Chip Tapered Transformers for Silicon Radio-Frequency Integrated Circuits
- Control Cell Behavior on Physical Topographical Surface