OOMURA Etsuji | Semiconductor Laboratory, Mitsubishi Electric Corporation
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概要
Semiconductor Laboratory, Mitsubishi Electric Corporation | 論文
- Flip-Chip Mounted GaAs Power FET with Improved Performances in X to Ku Band : B-1: GaAs IC
- High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate : B-5: LASERS (2)
- Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
- Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution
- Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm