Nakazato Kazuo | Hitachi Cambridge Laboratory:CREST JST (Japan Science and Technology)

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• NAKAZATO Kazuoの詳細を見る
• 同名の論文著者
• Hitachi Cambridge Laboratory:CREST JST (Japan Science and Technology)の論文著者

Hitachi Cambridge Laboratory:CREST JST (Japan Science and Technology) | 論文

• Characterization of Tunnel Barriers in Polycrystalline Silicon Point-Contact Single-Electron Transistors
• Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon : Electrical Properties of Condensed Matter
• Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers
• Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors
• Hybrid Circuit Simulator Including a Model for Single Electron Tunneling Devices

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