YANG Bing | Research Center for Interface Quantum Electronics, Hokkaido University
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概要
Research Center for Interface Quantum Electronics, Hokkaido University | 論文
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy
- A Novel Contactless and Nondestructive Measurement Method of Surface Recombination Velocity on Silicon Surfaces by Photoluminescence
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP